YOUR BROWSER IS OUT-OF-DATE.

We have detected that you are using an outdated browser. Our service may not work properly for you. We recommend upgrading or switching to another browser.

Sign in

 

Faculty of Computer Science and Management

Mateusz Wośko, DSc, PhD, Eng

Email: mateusz.wosko@pwr.edu.pl

Unit: Faculty of Electronics, Photonics and Microsystems (N) » Department of Microelectronics and Nanotechnology

ul. Długa 61-65, 53-633 Wrocław
building M-4, room 114
phone +48 71 320 4990

Office hours

  • poniedziałek 9.00-11.00 (building M-4, room 114)
  • wtorek 9.00-11.00 (building C-2, room 306)

Research fields

  • Epitaxy; AIII-N materials (nitrides) technology.

Recent papers

2016

  • Wośko M., Paszkiewicz B., Szymański T., Paszkiewicz R., Comparison of electrical, optical and structural properties of epitaxially grown HEMT's type AlGaN/AlN/GaN heterostructures on Al2O3, Si and SiC substrates. Superlattices and Microstructures. 2016, vol. 100, s. 619-626.
  • Szymański T., Wośko M., Paszkiewicz B., Serafińczuk J., Drzik M., Paszkiewicz R., Stress control by micropits density variation in strained AlGaN/GaN/SiN/AlN/Si(111) heterostructures. Crystal Research and Technology. 2016, vol. 51, nr 3, s. 225-230.
  • Szymański T., Wośko M., Paszkiewicz B., Paszkiewicz B., Paszkiewicz R., Sankowska I., Growth and coalescence control of inclined c-axis polar and semipolar GaN multilayer structures grown on Si(111), Si(112), and Si(115) by metalorganic vapor phase epitaxy. Journal of Vacuum Science & Technology. A, Vacuum, Surfaces and Films. 2016, vol. 35, nr 5, art. 051504, s. 1-8.

2015

  • Wośko M., Paszkiewicz B., Szymański T., Paszkiewicz R., Optimization of AlGaN/GaN/Si(111) buffer growth conditions for nitride based HEMTs on silicon substrates. Journal of Crystal Growth. 2015, vol. 414, s. 248-253.
  • Wośko M., Paszkiewicz B., Vincze A., Szymański T., Paszkiewicz R., GaN/AlN superlattice high electron mobility transistor heterostructures on GaN/Si(111). Physica Status Solidi. B, Basic Solid State Physics. 2015, vol. 252, nr 5, s. 1195-1200.

Papers in DONA database

Politechnika Wrocławska © 2024